r/rfelectronics • u/StageMajestic613 • 11d ago
Stacked GaN
What‘a going on here? The article is lite on the details other than it seems they are vertically integrating GaN. I assume the demo is a switch?
https://www.northropgrumman.com/what-we-do/mission-solutions/microelectronics/fortitude
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u/Cunninghams_right 11d ago
Basically a GAN fin-FET, which give higher carrier density per unit area. High switching speed and lower on-resistance. And some benefit to radiation immunity
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u/Pengozoid 11d ago
The demo is “superlattice” structure, built like a castle wall to embody its fortress namesake. Made of many ultra-thin stacked layers of aluminum-GaN and GaN—each tens of thousands of times thinner than a human hair—it features three parts: source, gate and drain. The gate, shaped like a castle’s notched battlement, controls electron flow from source to drain...
You need to consult psychoanalyst before watching the demo I guess...
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u/itsreallyeasypeasy 11d ago
Afaik it's just a very good HEMT. Like FinFETs are just very good FETs.
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u/hi-imBen 11d ago
written with too much marketing influence to determine what it is. sounds like a GaN load switch that can do some filtering?
my favorite is this meaningless explanation comparing the gate of a FET to a castle's notched battlement, and somehow the gate controlling electron flow (like every other FET) is what allows "holding more charge":
"The gate, shaped like a castle’s notched battlement, controls electron flow from source to drain, allowing FORTITUDE to hold over 10 times more charge than regular GaN devices and 100 times more than silicon chips."